The HBR5200 Schottky barrier diode data sheet provides electrical, thermal, and mechanical specifications from Jilin Sino-microelectronics.
The HBR5200 is a low‑voltage, high‑frequency Schottky barrier diode intended for rectifier and free‑wheeling applications, as well as polarity‑protection circuits. It features an axial lead structure, low power loss, high efficiency, and a guard ring for over‑voltage protection.
Key specifications include a maximum reverse repetitive peak voltage of 200 V, an average forward current of 5 A, a maximum junction temperature of 175 °C, and a thermal resistance of 25 W/°C (junction‑to‑case). The device is supplied in a DO‑201AD (DO‑27) package weighing approximately 1.1 g, and ordering codes are HBR5200D and HBR5200DR. This manual is written in Chinese.
| Average forward current (IFAV) | 5 A |
|---|---|
| Maximum reverse repetitive peak voltage (VRRM) | 200 V |
| Maximum junction temperature (Tj) | 175 °C |
| Thermal resistance (Rth j‑c) | 25 W/°C |
| Device weight | 1.1 g (approx.) |
The maximum reverse repetitive peak voltage is 200 V.
The device can operate up to a junction temperature of 175 °C.
The typical forward voltage at 125 °C is 0.70 V (max 0.75 V).