Datasheet for the Jilin Sino-microelectronics 30F120C fast recovery diode, detailing specifications, ratings, package and application information.
The 30F120C fast recovery diode from Jilin Sino-microelectronics is designed for snubber circuits, switch‑mode power supplies, UPS systems and high‑frequency switching applications. The document provides ordering codes, mechanical data and recommended usage notes.
Key electrical parameters include a low forward voltage drop of 2.8 V, a forward current rating of 30 A, and a reverse voltage rating of 1200 V. Thermal resistance is 1.3 °C/W and the device is supplied in a TO‑220C2L package. Absolute maximum ratings and characteristic curves are listed for design reference. This manual is written in Chinese.
| Average Forward Current (IF(AV)) | 30 A |
|---|---|
| Peak Repetitive Reverse Voltage (VRRM) | 1200 V |
| Typical Forward Voltage (VF) | 2.8 V |
| Typical Reverse Recovery Time (Trr) | 40 ns |
| Package | TO-220C2L |
| Thermal Resistance (Rth(j‑c)) | 1.3 °C/W |
| Junction Temperature Range | -55 °C to +150 °C |
| Storage Temperature Range | -55 °C to +150 °C |
| Avalanche Energy | 20 mJ |
The average forward rectified current (IF(AV)) is rated at 30 A.
It can handle a peak repetitive reverse voltage (VRRM) of 1200 V.
The diode is supplied in a TO‑220C2L package.
Typical applications include snubber diodes, switch power supplies, UPS systems, and antiparallel diodes for high‑frequency switching devices.