Datasheet for the IRFP150 N-Channel Power MOSFET featuring 40A current, 100V voltage, and 0.055 Ohm on-resistance in a TO-247 package.
This document is a datasheet for the IRFP150 N-Channel enhancement mode silicon gate power field effect transistor. It is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. The device is suitable for applications such as switching regulators, switching convertors, motor drivers, and relay drivers.
| Drain to Source Voltage | 100 V |
|---|---|
| Continuous Drain Current | 40 A |
| Package Type | TO-247 |
| Single Pulse Avalanche Energy | 150 mJ |
| Operating Temperature | -55 to 150 oC |
The maximum power dissipation is 180 W.
No, the document states it is not recommended for new designs.
The possible substitute product is IRFP150N.