Datasheet for Fairchild BD136/138/140 PNP epitaxial silicon transistors, detailing ratings, electrical characteristics, and package dimensions.
This datasheet provides the absolute maximum ratings, electrical characteristics, typical performance curves, and mechanical dimensions for the Fairchild BD136, BD138, and BD140 PNP epitaxial silicon transistors. It includes specifications such as collector‑base voltage, collector‑emitter voltage, emitter‑base voltage, and power dissipation limits.
The transistors are supplied in a TO‑126 package and are intended for medium‑power linear and switching applications. The document also contains safety notices, trademark information, and product status definitions.
| VCBO (Collector‑Base Voltage) | -45 V (BD136), -60 V (BD138), -80 V (BD140) |
|---|---|
| VCEO (Collector‑Emitter Voltage) | -45 V (BD136), -60 V (BD138), -80 V (BD140) |
| VEBO (Emitter‑Base Voltage) | -5 V |
| IC (Collector Current, DC) | 1.5 A |
| ICP (Collector Current, Pulse) | 3.0 A |
| IB (Base Current) | 0.5 A |
| PC (Collector Dissipation, TC=25 °C) | 12.5 W |
| TJ (Junction Temperature) | 150 °C |
| Package Type | TO‑126 |
BD136 is rated for 45 V, BD138 for 60 V, and BD140 for 80 V collector‑emitter voltage.
The maximum continuous collector current is 1.5 A.
They are supplied in a TO‑126 package.