The AT28C16 is a 16‑Kbit parallel EEPROM with 150 ns read access, low power consumption, and multiple package options.
The AT28C16 is a low‑power, high‑performance Electrically Erasable and Programmable Read‑Only Memory organized as 2,048 words × 8 bits (16 Kbit). It features fast read access (150 ns), fast byte write (200 µs), low standby current (<100 µA), and 30 mA active current. The device includes error‑correction, 32 bytes of extra EEPROM for identification, and is JEDEC‑approved with CMOS and TTL compatible I/O.
The datasheet provides detailed pin configurations for PDIP, SOIC, and PLCC packages, electrical characteristics, timing diagrams for read and write cycles, ordering information, and packaging dimensions. It also lists operating temperature ranges for commercial (0 °C‑70 °C) and industrial (‑40 °C‑85 °C) applications.
| Memory size | 16 Kbit (2K × 8) |
|---|---|
| Supply voltage | 5 V ± 10 % |
| Standby current | < 100 µA |
| Active current | 30 mA |
| Read access time | 150 ns |
| Byte write time (max) | 200 µs |
| Endurance | 10⁴ – 10⁵ cycles |
| Data retention | 10 years |
The read access time is 150 ns.
An extra 32 bytes of EEPROM are provided for device identification.
The standby current is less than 100 µA.
It requires a 5 V supply with a tolerance of ±10 %.