The ANPEC APM9934K datasheet provides specifications, electrical characteristics, and packaging details for this dual N‑ and P‑channel MOSFET.
The APM9934K is a dual enhancement mode MOSFET offering both N‑channel (20 V/9 A) and P‑channel (‑20 V/‑6 A) versions. It is designed for power management in notebook computers, portable equipment, and battery‑powered systems and complies with RoHS requirements.
The datasheet lists absolute maximum ratings, detailed electrical parameters such as on‑resistance, gate threshold, and capacitances, as well as mechanical data for the SOP‑8 package, solderability, and tape‑and‑reel dimensions.
| Drain‑Source Voltage (N‑Channel) | 20 V |
|---|---|
| Drain‑Source Voltage (P‑Channel) | ‑20 V |
| Continuous Drain Current (N‑Channel) | 9 A |
| Typical On‑Resistance (N‑Channel, VGS=4.5 V) | 15 mΩ |
| Typical On‑Resistance (P‑Channel, VGS=‑4.5 V) | 35 mΩ |
| Maximum Junction Temperature | 150 °C |
The N‑channel version is rated for a maximum drain‑source voltage of 20 V.
At VGS = 4.5 V, the typical on‑resistance is 15 mΩ.
The N‑channel MOSFET can continuously conduct up to 9 A.