A K Semiconductor SRC1206SF NPN Transistor Datasheet

KSR-2041-000 1 SRC1206SF NPN Silicon Transistor is a transistor used for switching applications, interface circuit, and driver circuit applications. It features built-in bias resistors to simplify circuit design, reduce the number of parts and manufacturing processes, and achieve high packing density.


A K Semiconductor SRC1206SF NPN Transistor Datasheet - cover page
Brand
AUK
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
3
File format
PDF
File size
44 KB
Published
02 November, 2011
Updated
28 September, 2023
MD5 checksum
0EC7DE74943DC60F9FA466F7278FF3DB

About this manual

The SRC1206SF is an NPN silicon transistor designed for switching, interface circuit, and driver circuit applications. It features built‑in bias resistors, a high packing density, and a simplified circuit design that reduces part count.

The datasheet lists absolute maximum ratings such as a 50 V collector‑emitter voltage and 100 mA collector current, as well as electrical characteristics including gain curves and transition frequency. Characteristic curves illustrate output current versus input voltage for both ON and OFF states.

What's inside

  • Descriptions
  • Features
  • Ordering Information
  • Absolute maximum ratings
  • Electrical Characteristics
  • Electrical Characteristic Curves

Specifications

Output Voltage (Vo)50 V
Input Voltage (Vi)20 V
Output Current (Io)100 mA
Power Dissipation (Pp)200 mW
Junction Temperature (Tj)150 °C

Frequently asked questions

What is the maximum collector‑emitter voltage for the SRC1206SF?

The maximum collector‑emitter voltage is 50 V.

What is the maximum power dissipation of the SRC1206SF?

The device can dissipate up to 200 mW of power.

What is the typical current gain (hFE) at V​o=5 V and I​o=10 mA?

The typical current gain is 200 at those conditions.

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