THN6301 series SiGe NPN transistor, the series products have low noise, high power gain and high transition frequency, suitable for LNA and wide band amplifier applications.
This datasheet describes the THN6301 family of SiGe NPN transistors offered in several SOT package types (SOT‑23, SOT‑323, SOT‑623F, SOT‑343). It lists the pin configuration, package dimensions, and absolute maximum ratings for each variant.
Detailed electrical specifications are given, including noise figure, power gain, transition frequency, collector current limits, and S‑parameter data over a wide frequency range. Graphs illustrate gain, noise figure, and output third‑order intercept point versus bias conditions.
| Power Gain (MAG) | 18 dB at 1 GHz, Voe=8 V, Ic=15 mA |
|---|---|
| Collector Current (Ic) | Maximum 65 mA |
| Total Power Dissipation (Ptot) | 150 mW |
| Collector‑to‑Base Breakdown Voltage (Vcbo) | 25 V |
| Collector‑to‑Emitter Breakdown Voltage (Vceo) | 12 V |
| Emitter‑to‑Base Breakdown Voltage (Vebo) | 2.5 V |
| Storage Temperature Range | -65 °C to 150 °C |
| Operating Junction Temperature | Up to 150 °C |
The maximum DC collector current is 65 mA.