This document describes the features and characteristics of KSR-2008-000 1 SRC1219SF NPN silicon transistor, including its switching application, interface circuit and driver circuit application, built-in bias resistors for simplified circuit design, reduction of parts and manufacturing process, and high packing density.
The SRC1219SF is an NPN silicon transistor intended for switching applications and driver circuits. It features built‑in bias resistors, high packing density, and a compact SOT‑23F package, simplifying circuit design and reducing part count.
Key electrical ratings include a 50 V maximum output voltage, 20 V input voltage limit, 100 mA maximum collector current, and 200 mW power dissipation. The device operates from –55 °C to 150 °C storage temperature and has a typical DC current gain of 30 and a transition frequency of 250 MHz.
| Device Type | NPN Silicon Transistor |
|---|---|
| Maximum Output Voltage (Vo) | 50 V |
| Maximum Input Voltage (Vi) | 20 V |
| Maximum Output Current (Io) | 100 mA |
| Power Dissipation (Pp) | 200 mW |
| Junction Temperature (Tj) | 150 °C |
| Storage Temperature Range | -55 ~ 150 °C |
| DC Current Gain (hFE) | 30 |
| Transition Frequency (fT) | 250 MHz |
The maximum output (collector) current is 100 mA.
The device can handle up to 50 V on the output and 20 V on the input.