SSM6N29TU is a N-channel MOSFET product produced by Toshiba. It has the characteristics of low on-resistance, high switching speed and small package.
The SSM6N29TU is a silicon N‑channel MOSFET designed for power‑management switching applications. It offers low on‑resistance and fast switching, making it suitable for compact, high‑efficiency circuits.
The document lists absolute maximum ratings, detailed electrical characteristics, switching test conditions, and extensive handling precautions, including static‑discharge protection and warnings against use in safety‑critical or high‑reliability systems. This manual is written in Japanese.
| Drain‑Source Voltage (VDS) max | 20 V |
|---|---|
| Gate‑Source Voltage (VGS) max | 12 V |
| On‑Resistance (RDS(on)) @ VGS=1.8 V | 235 mΩ (max) |
| On‑Resistance (RDS(on)) @ VGS=2.5 V | 178 mΩ (max) |
| On‑Resistance (RDS(on)) @ VGS=4.0 V | 143 mΩ (max) |
| Continuous Drain Current (ID) max | 3 A |
The device is rated for a maximum drain‑source voltage of 20 V.
Applying a gate‑source voltage of 4.0 V gives the lowest on‑resistance of 143 mΩ (max).