RN2407～RN2409 are three PNP transistor models produced by Toshiba. They have built-in bias resistors and are suitable for switching, inverter, interface, and driver circuits. RN2407～RN2409 are complementary to RN1407～RN1409 and can be used to design complementary circuits. They offer advantages such as miniaturization and simplified assembly.
The RN2407‑RN2409 series are PNP epitaxial transistors with integrated bias resistors, intended for switching, inverter, interface and driver circuits. Toshiba supplies the devices in standard semiconductor packages and highlights the reduction of component count and assembly effort.
Key specifications include collector‑base voltage of –50 V, collector‑emitter voltage of –50 V, collector current up to –100 mA, and power dissipation of 200 mW. Bias resistor values differ per model (e.g., RN2408 uses 22 kΩ and 47 kΩ). The datasheet also notes that these parts are not guaranteed for safety‑critical applications such as nuclear or aerospace equipment. This manual is written in Japanese.
| Collector‑Base Voltage (V_CBO) | -50 V |
|---|---|
| Collector‑Emitter Voltage (V_CEO) | -50 V |
| Collector Current (I_C) | -100 mA |
| Power Dissipation (P_C) | 200 mW |
| Junction Temperature (T_j) | 150 °C |
| Storage Temperature (T_stg) | -55 °C to 150 °C |
| Bias Resistor R1 (RN2408) | 22 kΩ |
| Bias Resistor R2 (RN2408) | 47 kΩ |
The maximum collector‑base voltage is –50 V.
RN2408 uses a 22 kΩ resistor (R1) and a 47 kΩ resistor (R2).