Toshiba 5GWJZ47 Schottky Barrier Diode Datasheet

5GWJZ47 is a Schottky diode produced by Toshiba. Its maximum reverse peak voltage is 40V, maximum average forward current is 5A, reverse recovery time is 35ns, and forward voltage is 0.55V.


Toshiba 5GWJZ47 Schottky Barrier Diode Datasheet - cover page
Brand
Toshiba
Category
Other Electronics
Document type
Datasheet
Language
Japanese
Pages
4
File format
PDF
File size
305 KB
Published
18 October, 2011
Updated
30 September, 2023
MD5 checksum
22D2A800FCADAF473B8584664C668591

About this manual

The Toshiba 5GWJZ47 is a Schottky barrier diode designed for low forward voltage and fast reverse recovery. It provides a peak repetitive reverse voltage of 40 V, an average forward current of 5 A, and a forward voltage of 0.55 V at that current.

The datasheet includes electrical characteristics, maximum ratings, package dimensions, and safety precautions. Users are advised to consider thermal design, margin for voltage and temperature, and to consult Toshiba's semiconductor handling guidelines for reliable operation. This manual is written in Japanese.

What's inside

  • Electrical Characteristics
  • Maximum Ratings
  • Precautions
  • Package Information
  • Reliability Notes

Specifications

Peak Repetitive Reverse Voltage (VRRM)40 V
Average Forward Current (I_F(AV))5 A
Forward Voltage (V_F) at 5 A0.55 V
Reverse Recovery Time (tr)85 ns
Junction Temperature Range-40 °C to 125 °C
Mass2.0 g

Frequently asked questions

What is the peak repetitive reverse voltage of the 5GWJZ47?

The diode’s peak repetitive reverse voltage is 40 V.

What is the maximum average forward current rating?

The maximum average forward current is 5 A.

What forward voltage does the diode have at 5 A?

At 5 A, the forward voltage is 0.55 V.

What is the recommended maximum junction temperature?

The recommended maximum junction temperature is 125 °C.

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