This document describes the features and characteristics of Toshiba Silicon N-Channel MOSFET (U-MOSⅢ) SSM6K24FE. The product is known for its high-speed switching, small package size, and low on-resistance.
The SSM6K24FE is a silicon N‑channel MOSFET (U‑MOS) offered by Toshiba. It is designed for high‑speed switching in compact packages suitable for high‑density mounting.
The document lists absolute maximum ratings, detailed electrical parameters such as drain‑source voltage, on‑resistance, and capacitances, as well as handling precautions that emphasize the device’s sensitivity to static electricity. This manual is written in Japanese.
| Drain‑Source Voltage (VDS) max | 30 V |
|---|---|
| Gate‑Source Voltage (VGS) max | 12 V |
| On‑Resistance (Ron) max at VGS=4.5 V | 145 mΩ |
The maximum drain‑source voltage is 30 V.
The on‑resistance (Ron) is specified as a maximum of 145 mΩ at VGS=4.5 V.
It is offered in a small package that is optimal for high‑density mounting.