STMicroelectronics STPS40100HR Aerospace Schottky Rectifier Datasheet

The STPS40100HR is a power Schottky rectifier designed and packaged to comply with the ESCC5000 specification for aerospace products. It has a maximum forward current of 2x20A, a maximum repetitive peak voltage of 100V, a low forward voltage drop of 0.9V, a maximum junction temperature of 175℃, negligible switching losses, low capacitance, high reverse avalanche surge capability, hermetic packages, and is ESCC qualified. It is ideal for use in applications for aerospace and other harsh environments.


STMicroelectronics STPS40100HR Aerospace Schottky Rectifier Datasheet - cover page
Brand
STMicroelectronics
Document type
Datasheet
Language
English
Pages
9
File format
PDF
File size
77 KB
Published
08 August, 2012
Updated
30 September, 2023
MD5 checksum
354BB0202DA3F28F502E0172DC112862

About this manual

The document details the STPS40100HR, an aerospace power Schottky rectifier designed to comply with ESCC5000 specifications. It features a dual-diode configuration in a hermetically sealed TO-254 package, intended for medium voltage applications and high-frequency circuits where low switching losses are required.

Key characteristics include a forward current of 2 x 20A, a repetitive peak reverse voltage of 100V, and a maximum junction temperature of +175°C. The device is qualified for radiation environments up to 1 Mrad at high dose rates.

What's inside

  • Features
  • Description
  • Absolute Maximum Ratings
  • Electrical Measurements
  • Thermal Resistance
  • Configurations
  • Package Information
  • Ordering Information

Specifications

Forward current (per diode)20 A
Repetitive peak reverse voltage100 V
Maximum junction temperature+175 °C
Forward voltage drop (per diode)900 mV max

Frequently asked questions

Is the STPS40100HR qualified for radiation environments?

Yes, it is targeted for 150 krad low dose rate and 1 Mrad high dose rate.

What is the forward voltage drop of the device?

The maximum forward voltage drop is 900 mV when measured with a pulse method at 20 A.

What is the thermal resistance from junction to case?

The thermal resistance per diode is 15 °C/W and per device is 1.2 °C/W.

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