STMicroelectronics STGW30NB60H PowerMESH IGBT Datasheet

The STGW30NB60H is an advanced IGBT designed by STMicroelectronics. It features high input impedance, low on-voltage drop, low gate charge, high current capability, very high frequency operation, and off losses include tail current. It is suitable for high frequency motor controls, welding equipment, SMPS and PFC in both hard switch and resonant topologies.


STMicroelectronics STGW30NB60H PowerMESH IGBT Datasheet - cover page
Brand
STMicroelectronics
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
8
File format
PDF
File size
88 KB
Published
08 August, 2012
Updated
30 September, 2023
MD5 checksum
C9F758118E0EF7BCD073942DCB85EDCD

About this manual

This document is a technical datasheet for the STMicroelectronics STGW30NB60H, an N-channel PowerMESH™ IGBT housed in a TO-247 package. The device features a patented strip layout designed to achieve very low switching times suitable for high-frequency applications below 120kHz.

The datasheet provides absolute maximum ratings, electrical characteristics including static and dynamic parameters, thermal data, and graphical representations of output and transfer characteristics. It also includes mechanical dimensions and application information for motor controls, welding equipment, and SMPS/PFC circuits.

What's inside

  • Description
  • Applications
  • Absolute Maximum Ratings
  • Thermal Data
  • Electrical Characteristics (OFF)
  • Electrical Characteristics (ON)
  • Dynamic Parameters
  • Switching Losses
  • Output Characteristics
  • Mechanical Data

Specifications

Collector-Emitter Voltage600 V
Continuous Collector Current at 25°C60 A
Continuous Collector Current at 100°C30 A
Pulsed Collector Current240 A
Total Dissipation at 25°C190 W
Package TypeTO-247
Operating Junction Temperature Max.150 °C

Frequently asked questions

What are the applications for this IGBT?

It is designed for high frequency motor controls, welding equipments, and SMPS and PFC in both hard switch and resonant topologies.

Is this device optimized for high frequency operation?

Yes, the suffix "H" identifies a family optimized to achieve very low switching times for high frequency applications (<120kHz).

What is the maximum junction temperature?

The maximum operating junction temperature (Tj) is 150 °C.

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