This document describes the features and characteristics of the OP130 supplier. The product is manufactured by Each Manufacturing Company and is known for its high quality and reliability. Detailed features and technical specifications can be found in this document.
This document is a product bulletin and datasheet from May 1996 for the Optek Technology OP130 series of Gallium Arsenide (GaAs) hermetic infrared emitting diodes. The devices are available in four types: OP130, OP131, OP132, and OP133, distinguished by their radiant power output ranging from 1.0 mW to 5.0 mW.
| Package Type | TO-46 hermetically sealed package |
|---|---|
| Material | Gallium Arsenide (GaAs) |
| Reverse Voltage Max | 2.0V |
| Continuous Forward Current | 100 mA |
| Peak Forward Current | 10.0A |
| Operating Temperature Range | -65° C to +125°C |
| Power Dissipation Max | 200 mW |
| Radiant Power Output (OP130) | 1.0 mW |
| Radiant Power Output (OP131) | 3.0 mW |
| Radiant Power Output (OP132) | 4.0 mW |
| Radiant Power Output (OP133) | 5.0 mW |
| Forward Voltage Typ | 1.75 V |
| Wavelength at Peak Emission | 935 nm |
| Spectral Bandwidth | 50 nm |
| Emission Angle at Half Power Points | 18 Deg. |
The maximum continuous forward current is 100 mA.
The wavelength at peak emission is 935 nm.