This application note explains how to replace the external EEPROM with the emulated-EEPROM in STR91xF devices using the on-chip Flash memory, which saves components and silicon area.
This document describes the process of replacing external EEPROM with emulated EEPROM using the embedded Flash memory of STR91xF devices. It highlights the differences between external EEPROM and embedded Flash memory, such as write access time, writing method, and erase time. The note also discusses the specific features of the STR91xF on-chip Flash memory that support this emulation.
| Main Flash memory size | up to 512 Kbytes |
|---|---|
| Secondary Flash memory size | 32 Kbytes |
| Program/Erase cycles | 100 000 cycles |
| Data retention | 20-year |
| Programming basis | 16-bit half-word |
External EEPROM does not require a block erase operation to free up space before data can be rewritten, whereas Flash memory does.
Yes, the writing can be interrupted by a power failure and by a CPU reset.
The data granularity is 16 bits.