SMP1000G-JP is a large Silicon P.I.N. photodiode produced by Semelab plc, incorporated in a hermetic metal can package. It has high sensitivity, good linearity, low noise and wide spectral response, suitable for high sensitivity light measurement applications
The document describes the Semelab SMP1000G-JP, a large Silicon P.I.N. photodiode designed for light measurement applications where high sensitivity is required. It incorporates the device in a TO-8 hermetic metal can package with an optional EMI screening mesh to ensure immunity to radiated electrical interference.
The datasheet provides mechanical dimensions, absolute maximum ratings including operating and storage temperatures, and detailed electrical characteristics such as responsivity at 900nm, dark current, breakdown voltage, capacitance, rise time, and NEP. It also includes graphs for directional characteristics and spectral response.
| Reverse breakdown voltage | 60V |
|---|---|
| Active Area | 76.85 mm² |
| Rise Time | 16 ns |
| NEP at 900nm | 28x10^-14 W/√Hz |
The device has an active area measuring 76.85 mm².
The photodiode can withstand a reverse breakdown voltage of up to 80 V.
The unit operates within a temperature range of -40°C to +70°C.