This data sheet provides the specifications of the IRF054SMD, including the rated values, maximum values, and operating temperature range.
The IRF054SMD is supplied in an SMD1 surface‑mount package with a compact footprint. Pad 1 is the gate, Pad 2 the drain, and Pad 3 the source, allowing efficient PCB use and high packing densities.
Electrical specifications include a 60 V drain‑source breakdown voltage, 45 A continuous drain current at 25 °C, and a maximum power dissipation of 100 W. The device operates from –55 °C to 150 °C and features low on‑resistance and fast switching characteristics.
| Continuous Drain Current (Id) @ 25 °C | 45 A |
|---|---|
| Power Dissipation (Pd) @ 25 °C | 100 W |
| Package Type | SMD1 |
The device can handle up to 45 A of continuous drain current at 25 °C.
It uses an SMD1 surface‑mount package with separate gate, drain, and source pads.
The MOSFET can dissipate up to 100 W when mounted at 25 °C.