SML60J35 is an N-channel enhancement mode high voltage power MOSFET with faster switching speed, lower leakage, and 100% avalanche tested. It utilizes new technology to minimize the JFET effect, increase packing density, and reduce on-resistance.
The SML60J35 is a high‑voltage N‑channel enhancement‑mode power MOSFET offered by Semelab. It is supplied in a compact SOT‑227 package and is designed for fast switching with low leakage and 100 % avalanche testing.
The datasheet provides absolute maximum ratings, static and dynamic electrical characteristics, diode ratings, and thermal parameters, allowing designers to evaluate its suitability for high‑power applications.
| Drain‑Source Voltage (VDS) | 600 V |
|---|---|
| Continuous Drain Current (ID) | 35 A |
| Pulsed Drain Current (IDM) | 140 A |
| Total Power Dissipation | 450 W |
| On‑State Resistance (RDS(on)) | 0.150 Ω |
| Gate Charge (Qg) | 320 nC |
| Input Capacitance (Ciss) | 7410 pF |
| Junction‑to‑Case Thermal Resistance (RθJC) | 0.28 °C/W |
| Junction‑to‑Ambient Thermal Resistance (RθJA) | 40 °C/W |
The maximum drain‑source voltage is 600 V.
It can handle a continuous drain current of 35 A.
The device is supplied in an SOT‑227 package.
Junction‑to‑case resistance is 0.28 °C/W and junction‑to‑ambient resistance is 40 °C/W.