The document describes the characteristics of the D1011UK model of Semelab plc, including power dissipation, drain-source breakdown voltage, gate-source breakdown voltage, drain current, storage temperature, and maximum operating junction temperature. The product is a gold metallised multi-purpose silicon DMOS RF FET with a power of 10W, a voltage of 28V, and a frequency range of 1GHz. It is suitable for broad band applications and features simplified amplifier design, low noise, and high gain.
The D1011UK is a metal‑gate RF silicon FET designed for broadband HF/VHF/UHF communications from 1 MHz to 1 GHz. It offers low noise, simple biasing, and high gain, making it suitable for simplified amplifier designs.
Key specifications include a 30 W power dissipation, 70 V drain‑source breakdown voltage, +20 V gate‑source breakdown voltage, and a minimum gain of 13 dB. Mechanical data list an 8‑pin package with detailed dimensions, and thermal data show a junction‑case thermal resistance of 6 °C/W.
| Power Dissipation | 30 W |
|---|---|
| Drain‑Source Breakdown Voltage | 70 V |
| Gate‑Source Breakdown Voltage | +20 V |
| Storage Temperature Range | -65 °C to 150 °C |
| Maximum Junction Temperature | 200 °C |
| Minimum Gain | 13 dB |
| Thermal Resistance (Junction‑Case) | 6 °C/W |
The device can dissipate up to 30 W of power.
It has a drain‑source breakdown voltage of 70 V and a gate‑source breakdown voltage of +20 V.
The part can be stored from –65 °C up to 150 °C.