The document introduces the characteristics of HC-MOS power consumption, including static power consumption, operating power consumption and maximum power consumption, and gives a comparison of MM54HC/MM74HC and LSTTL power consumption
This document provides a technical analysis of power dissipation characteristics for the MM54HC/MM74HC family of CMOS integrated circuits. It details the causes of power consumption, including leakage current in the quiescent state and transient effects during switching.
The text compares HC-CMOS performance against LSTTL logic families, illustrating differences in supply current and identifying the frequency at which power consumption crosses over between technologies.
| Leakage Current (Icc) at 25°C for Gate Buffer MSI Unit | 4.0 uA |
|---|---|
| Leakage Current (Icc) at 125°C for Gate Buffer MSI Unit | 160 uA |
| Power Cross-over Frequency vs LSTTL | about 20 MHz |
It is caused by leakage current flowing across reverse-biased diode junctions due to thermally-generated charge carriers.
Power dissipated during switching is directly proportional to the operating frequency of the device.
They are load capacitance transient dissipation, internal capacitance transient dissipation, and current spiking during switching.