Key facts
- Brand
- Diodes
- Model
- 2N7002V
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-12
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Diodes Incorporated 2N7002V/VA Dual N-Channel Enhancement Mode Field Effect Transistor Datasheet
This document is a datasheet for the Diodes Incorporated 2N7002V/VA, a dual N-channel enhancement mode field effect transistor (MOSFET). The device features a low on-resistance and is packaged in the SOT-563 surface mount case. It is designed for applications requiring fast switching speeds and low input capacitance.
Read onlineDiodes 2N7002V specifications
| Drain-Source Voltage | 60 V |
|---|---|
| Drain Current (Continuous) | 280 mA |
| Drain Current (Pulsed) | 15 A |
| Total Power Dissipation | 150 mW |
| Operating Temperature Range | -55 to +150 °C |
| Package Type | SOT-563 |
| Input Capacitance | 50 pF |
| Turn-On Delay Time | 20 ns |
Source: Diodes Incorporated 2N7002V/VA Dual N-Channel Enhancement Mode Field Effect Transistor Datasheet
All Diodes 2N7002V documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain-source voltage?
The maximum drain-source voltage is 60 V.
From: Diodes Incorporated 2N7002V/VA Dual N-Channel Enhancement Mode Field Effect Transistor Datasheet
What is the operating temperature range?
The device operates and stores between -55 and +150 °C.
From: Diodes Incorporated 2N7002V/VA Dual N-Channel Enhancement Mode Field Effect Transistor Datasheet
What is the package type for the 2N7002V/VA?
The device uses an ultra-small surface mount SOT-563 case.
From: Diodes Incorporated 2N7002V/VA Dual N-Channel Enhancement Mode MOSFET Datasheet
Is the 2N7002V/VA lead-free and RoHS compliant?
Yes, it is designed as Lead Free by Design and is RoHS Compliant.
From: Diodes Incorporated 2N7002V/VA Dual N-Channel Enhancement Mode MOSFET Datasheet