The 2N7000CSM is a N-channel enhancement mode MOS transistor produced by Magnatec. Its features are V(BR)DSS=60V, RDS(ON)=5WWWW, ID=200mA. The transistor is packaged in a ceramic surface mount package with screening options.
This document is a preliminary datasheet for the Semelab 2N7000CSM, an N-channel enhancement mode MOS transistor. The device is housed in a hermetic ceramic SOT23 package and is designed for surface mount applications. It features a maximum drain-source voltage of 60V and a continuous drain current of 200mA.
The datasheet provides detailed mechanical dimensions and comprehensive electrical characteristics, including static parameters like gate threshold voltage and dynamic parameters such as input capacitance and switching times. Absolute maximum ratings and thermal resistance data are also included for design reference.
| Package Type | SOT23 Ceramic |
|---|
It is available in a hermetic ceramic SOT23 surface mount package.
The absolute maximum drain-source voltage is rated at 60V.
The device supports a continuous drain current of up to 200mA.
The maximum power dissipation is 300mW when the junction temperature is 25°C.