This data sheet provides detailed information on TEA1610P and TEA1610T, including product features, applications, etc.
The TEA1610 is a monolithic integrated circuit implemented in a high-voltage DMOS process. It serves as a controller for zero-voltage switching (ZVS) resonant converters and provides drive functions for two discrete power MOSFETs in a half-bridge configuration.
Key features include an integrated high voltage level-shift function, a bootstrap diode, a transconductance error amplifier for ultra-high ohmic regulation feedback, and latched shut-down protection against overcurrent and overvoltage. The device also offers adjustable minimum and maximum frequencies along with an undervoltage lockout.
| Bridge voltage supply (high side) | 600 V |
|---|---|
| Gate driver source current | -225 mA |
| Gate driver sink current | 300 mA |
| Maximum bridge frequency | 550 kHz |
| Error amplifier common mode input voltage | 2.5 V |
The shut-down input has an accurate threshold level of 2.33 V.
The device can be activated again by lowering Vpp below the Vpp reset level, which is typically 5.3 V.