This document describes the features and characteristics of the WMS256K16-XXX product, including access times, MIL-STD-883 compliance, packaging options, data byte control, minimum data retention for battery backup operation, temperature range, power supply, low power CMOS, and TTL compatible inputs and outputs.
This document is a technical datasheet for the White Electronic Designs WMS256K16-XXX series of 256K x 16-bit monolithic static RAM (SRAM) devices. The chip features TTL-compatible inputs and outputs, operates with a +5V power supply, and offers access times ranging from 17ns to 35ns depending on the specific part number.
The datasheet provides detailed information on pin configuration, truth tables for read/write operations, absolute maximum ratings, DC characteristics (such as leakage currents), AC timing parameters, and package dimensions. It covers three available ceramic packages: SOJ (Package 102), Flatpack (Package 225), and Formed Ceramic Flatpack (Package 211).
| Organization | 256K x 16 |
|---|---|
| Supply Voltage | +5V |
| Access Times | 17ns, 20ns, 25ns, 35ns |
| Input Capacitance | 20 pF |
The device requires a minimum of 2V for data retention during battery back-up operations.
Yes, the WMS256K16L-XXX is a Low Power Version designed specifically for data retention.
The WMS256K16-XXX series offers read cycle times of 17, 20, 25, and 35 nanoseconds.