This document describes the features and characteristics of the WED3DG6466V-D1-JD1 1 product from White Electronic Designs Corporation, including PC100 and PC133 compatibility, burst mode operation, auto and self-refresh capability, LVTTL compatible inputs and outputs, serial presence detect with EEPROM, etc.
The WED3DG6466V-D1 is a 512 MB (64 M×64) synchronous DRAM module built on a 144‑pin SO‑DIMM substrate. It features PC100/PC133 compatibility, burst‑mode operation, LVTTL‑compatible I/Os, and an integrated 2 K EEPROM for Serial Presence Detect.
Key specifications include a supply voltage range of 3.0‑3.6 V, storage temperature from –55 °C to +150 °C, various timing parameters for 100 MHz and 133 MHz operation, and detailed pin‑out information. Ordering options are provided for both D1 and JD1 package heights (31.75 mm).
| Memory Capacity | 512 MB (64 M×64 SDRAM) |
|---|---|
| Supply Voltage (Vcc) | 3.0 V min / 3.3 V typ / 3.6 V max |
| Storage Temperature Range | -55 °C to +150 °C |
| Input Capacitance (A0‑A12) | 35 pF |
| Data I/O Capacitance (DQ0‑DQ63) | 10 pF |
| Operating Current (Burst Length = 1, one bank active) | 1 080 mA |
| Refresh Current | 2 280 mA |
The device is rated for storage temperatures from –55 °C to +150 °C.