This document describes the features and characteristics of the WSE128K16-XXX 1 128Kx16 SRAM/EEPROM module produced by White Electronic Designs Corp., including access times, packaging, memory organization, and low power.
This document is a preliminary datasheet for the WSE128K16-XXX module by White Electronic Designs Corporation. The device integrates two blocks of memory: 128Kx16 of SRAM and 128Kx16 of EEPROM, both organized as 128Kx16 with separate data buses or configurable as 256Kx8.
The datasheet provides comprehensive electrical characteristics for the module. It lists absolute maximum ratings, recommended operating conditions (including commercial, industrial, and military temperature ranges), and detailed DC and AC parameters for both SRAM and EEPROM operations. Timing diagrams illustrate read/write cycles controlled by chip select or write enable signals.
| Memory Organization | 128Kx16 SRAM and 128Kx16 EEPROM |
|---|---|
| SRAM Access Time (Typical) | 35ns, 45ns, or 70ns |
| EEPROM Access Time (Typical) | 150ns, 120ns, or 300ns |
| Write Endurance | 10,000 Cycles |
| Data Retention (25°C) | 10 Years |
| Operating Temperature Range | -55 to +125 °C |
| Supply Voltage (Vcc) | 4.5 to 5.5 V |
Yes, both the SRAM and EEPROM blocks are user-configurable as 256Kx8.
The maximum Page Write Cycle Time is 10ms.