The document describes the specifications and precautions of SANYO products, stating that they are not suitable for high-reliability applications such as life-support systems and aircraft control systems. The document also introduces the features of the 2SC5415 NPN Epitaxial Planar Silicon Transistor, such as high gain and high cutoff frequency.
This document is a technical datasheet for the SANYO 2SC5415, an NPN epitaxial planar silicon transistor designed for high-frequency low-noise amplifier applications. Key features include a typical forward transfer gain of 9 dB at 1 GHz and a cutoff frequency (fT) of 6.7 GHz.
| Collector-to-Base Voltage (VcBo) | 20 V |
|---|---|
| Collector-to-Emitter Voltage (VCEO) | 12 V |
| Emitter-to-Base Voltage (VEBO) | 2 V |
| Collector Current (Io) | 100 mA |
| Junction Temperature (Tj) | 150 C |
| Forward Transfer Gain (|S2te|?) | 9 dB typ @ 1GHz |
| Cutoff Frequency (fp) | 6.7 GHz typ |
The typical forward transfer gain is 9 dB.
The maximum junction temperature rating is 150 degrees Celsius.