This document is a datasheet for the SANYO DS446, a silicon epitaxial planar type diode designed for temperature compensation and very high-speed switching applications. Key features include a glass sleeve structure and specific performance metrics such as a maximum reverse recovery time of 4.0ns and a maximum interterminal capacitance of 3.0pF.
The document provides absolute maximum ratings at 25°C, including a peak reverse voltage of 105V and a junction temperature of 175°C. It also lists electrical characteristics such as forward voltage and reverse current, along with a test circuit diagram and package dimensions.
| Product Type | Silicon Epitaxial Planar Type Very High-Speed Switching Diode |
|---|---|
| Power Dissipation | 300 mW max. |
| Interterminal Capacitance | 3.0pF max. |
| Reverse Recovery Time | 4.0ns max. |
| Peak Reverse Voltage | 105 V |
| Reverse Voltage | 100 V |
| Peak Forward Current | 500 mA |
| Average Rectified Current | 200 mA |
| Surge Forward Current | 700 mA |
| Junction Temperature | 175 °C |
| Storage Temperature | -65 to +175 °C |
| Forward Voltage (typ) | 0.65 V |
The maximum reverse recovery time is 4.0ns.
The maximum power dissipation is 300mW.
The peak reverse voltage rating is 105V.