This document describes the features and characteristics of GAL20V8Z and GAL20V8ZD, including zero power E2CMOS technology, high performance E2CMOS technology, E2 cell technology, and eight output logic macrocells.
This datasheet describes the GAL20V8Z and GAL20V8ZD, which are Zero Power E2CMOS Programmable Logic Devices (PLDs) manufactured using Lattice Semiconductor's advanced technology. These devices combine CMOS with Electrically Erasable (E2) floating gate technology to offer a combination of high speed and low power consumption suitable for battery-powered systems and high-speed graphics processing.
| Standby Current | 100µA |
|---|---|
| Maximum Propagation Delay | 12 ns |
| Maximum Clock Frequency | 83.3 MHz |
| Output Drive | 16 mA |
| Data Retention | 20 Year |
| Erase Cycles | 100 |
| Inputs to AND Array | 19 |
The standby current is 100µA.
The maximum propagation delay is 12 ns.
The device is specified for 100 erase/write cycles.
The maximum frequency (Fmax) is 83.3 MHz.