TMS29LF800T and TMS29LF800B are flash memory storage devices with 1048576 by 8-bit/524288 by 16-bit organization. They support 2.7V and 3.6V read/write operations and have multiple memory organization and architecture features. The products have single power supply, erasable, programmable, and low power dissipation characteristics.
The TMS29LF800T and TMS29LF800B are 1048576 by 8-bit/524288 by 16-bit flash memory devices designed for single 3-V supply operation. These memories feature an array-blocking architecture with one boot sector, two parameter sectors, one large sector, and fifteen standard sectors, allowing any combination of sectors to be erased or marked as read-only.
| Memory Organization (Byte Mode) | 1048576 By 8 Bits |
|---|---|
| Memory Organization (Word Mode) | 524288 By 16 Bits |
| Supply Voltage | 3-V Single Supply |
| Active Read Current (Byte Mode) | 20-mA Typical |
| Program/Erase Current | 30-mA Typical |
| Standby Current | Less Than 60-uA |
| Deep Power-Down Current | 5 uA |
| Program/Erase Endurance (T) | 100,000 Cycles |
The TMS29LF800T/B is offered with 90-, 100-, and 120-ns access times.
Yes, any combination of sectors can be erased or marked as read-only.
Yes, it is fully compatible with JEDEC EEPROM Command Set.