This is the manual of a SANYO product with model number 5HP02M, which features low voltage and low resistance and can be used for ultrahigh-speed switching.
This document is a datasheet for the SANYO 5HP02M, a P-Channel Silicon MOSFET designed for ultrahigh-speed switching applications. Key features include low ON resistance and AV drive capabilities.
| Drain-to-Source Voltage | 50 V |
|---|---|
| Gate-to-Source Voltage | +20 V |
| Drain Current (DC) | 0.14 A |
| Drain Current (pulse) | 0.56 A |
| Channel Temperature | 150 °C |
| Storage Temperature | -55 to +150 °C |
| Turn-ON Delay Time | 13 ns |
| Rise Time | 10 ns |
| Turn-OFF Delay Time | 190 ns |
| Fall Time | 95 ns |
| Diode Forward Voltage | 0.83 to 1.2 V |
The maximum channel temperature is 150 °C.
The typical static drain-to-source on-state resistance is 65 mΩ.