The M5M51008BFP, VP, RV, KV, KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. They are low standby current and low operation current and ideal for the battery back-up application.
This document is a technical datasheet for the Mitsubishi Electric M5M51008BFP, VP, RV, KV, and KR series of 1048576-bit (1MB) CMOS Static RAMs. The devices are organized as 131072 words by 8 bits and utilize high-performance triple polysilicon CMOS technology to achieve low power consumption and high density.
| Memory Capacity | 1048576-bit (131072-word by 8-bit) |
|---|---|
| Operating Temperature | 0 to 70 °C |
| Power Supply Voltage (Vcc) | 3.3 ± 0.3 V or 3.0 ± 0.3 V |
| Stand-by Current (Icc4) | 0.3 µA typical |
The read cycle time ranges from a minimum of 70ns to a maximum of 150ns depending on the specific speed grade.
Yes, all inputs and outputs are designed to be directly TTL compatible.