The document describes the features and characteristics of PhotoMOS RELAYS GU (General Use)-E Type 2-Channel (Form A) Type, including reinforced insulation, compact size, applicable for 2 Form A and two independent 1 Form A use, control of low-level analog signals, high sensitivity, high speed response, low-level off state leakage current, etc.
This document is a technical datasheet for the NAIS PhotoMOS Relay series, specifically models AQW210EH and AQW214EH. The devices are designed as general-use relays with Form A contacts, available in both through-hole and surface-mount terminal configurations.
Key features highlighted include reinforced insulation rated at 5,000 V, a compact 8-pin DIP size of approximately 6.4 x 9.86 x 3.2 mm, and high sensitivity allowing control of up to 0.14 A load current with only 5 mA input current.
| Insulation Type | Reinforced 5,000 V type |
|---|---|
| Package Size (Through Hole) | (W)6.4x(L)9.86x(H)3.2 mm |
| Max Load Current (Single Channel) | 0.14 A |
| Input Current for Operation | 5 mA |
| Typical Turn-on Time | 0.5 ms |
| Operating Temperature Range | -40°C to +85°C |
The AQW210EH model supports a peak load current of 0.36 A for 100 ms (1 shot).
The device has a fast operation speed of 0.5 ms under typical conditions.
It can control a maximum load current of 0.14 A when the input current is 5 mA.
The device measures 6.4 mm by 9.86 mm by 3.2 mm.