Aeroflex ACT-F128K8 1 Megabit Monolithic Flash Module Datasheet

The ACT-F128K8 is a high-speed CMOS monolithic Flash module designed for full temperature range military, space, or high reliability applications. It features low power consumption, TTL compatible inputs and CMOS outputs, various access time options, +5V programming and supply, support for full chip erase, etc.


Aeroflex ACT-F128K8 1 Megabit Monolithic Flash Module Datasheet - cover page
Brand
Aeroflex
Category
Flash Memory
Document type
Datasheet
Language
English
Pages
22
File format
PDF
File size
160 KB
Published
08 June, 2012
Updated
29 September, 2023
MD5 checksum
6B2932A765587C3AA2232D15803989B2

About this manual

The ACT–F128K8 is a high speed, 1 megabit CMOS monolithic Flash module designed for full temperature range military, space, or high reliability applications. The device features TTL compatible inputs and CMOS outputs, supporting access times of 60ns, 70ns, 90ns, 120ns, and 150ns maximum.

The module is organized as 128Kx8 bits and supports sector architecture with eight equal size sectors of 16K bytes each. It operates on a single +5V power supply and includes embedded erase and program algorithms for in-system programming without requiring external high voltage sources.

What's inside

  • General Description
  • Features
  • Pin Description
  • Absolute Maximum Ratings
  • DC Characteristics
  • AC Characteristics - Read Only Operations
  • AC Characteristics - Write/Erase/Program Operations

Specifications

Memory Capacity128K x 8 bits
Operating Temperature Range (Military)-55°C to +125°C
Supply Voltage+4.5V to +5.5V
Access Time Grades60ns, 70ns, 90ns, 120ns, 150ns
Endurance (Write/Erase cycles)100,000
Data Retention10 Years
Sector Architecture Size16K bytes each

Frequently asked questions

What are the available access time grades for the ACT-F128K8?

The standard access times are 60ns, 70ns, 90ns, 120ns, and 150ns maximum.

Does the ACT-F128K8 require a high voltage supply for programming?

No, it uses a single +5V power supply operation for both read and write functions.

What is the endurance of the Flash memory?

The device supports a minimum of 100,000 erase and program cycles.

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