This document introduces the NTLTD7900ZR2 Power MOSFET, which is a logic level N-channel Micro8 Leadless EZFETs™ power MOSFET with monolithic back-to-back Zener diode protection. This MOSFET features ultra low RDS(on) and true logic level performance. It is designed for low voltage, high speed switching applications that require high power efficiency and extended battery life. Typical applications include DC-DC converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones.
This document is a technical datasheet for the NTLTD7900ZR2 Power MOSFET from ON Semiconductor. The device belongs to the EZFETs™ series, which features monolithic back-to-back Zener diodes for ESD and transient protection. It is designed as a miniature surface mount component with ultra-low on-resistance (Rds(on)) suitable for logic-level gate drive applications.
| Drain-to-Source Voltage (Vdss) | 20 V |
|---|---|
| Continuous Drain Current (Ta = 25°C) | 9.0 A |
| Pulsed Drain Current | 30 A |
| Operating Junction and Storage Temperature Range | -55 to 150 °C |
| Thermal Resistance (Junction-to-Ambient) | 38 °CA/W |
| Static Drain-to-Source On-Resistance (Typical) | 26 mΩ |
The device supports a continuous drain current of 9.0 A when the ambient temperature is 25°C.
The device can operate between -55°C and 150°C for both junction and storage temperatures.