This product is a 75A, 55V, 0.007 Ohm, N-Channel UltraFET Power MOSFETs produced by Intersil Corporation. It has high performance, low power consumption, low reverse recovery time and stored charge.
The document provides a comprehensive technical overview of the HUF75345G3, HUF75345P3, and HUF75345S3S N-Channel UltraFET Power MOSFETs. These devices are manufactured using Intersil's innovative UltraFET process to achieve low on-resistance per silicon area, making them suitable for high-power efficiency applications such as switching regulators, converters, motor drivers, and power management systems in portable products.
The datasheet includes absolute maximum ratings, electrical specifications (off-state, on-state, thermal, switching, and gate charge), capacitance data, source-to-drain diode characteristics, and typical performance curves. It also provides simulation models for PSPICE and SABER to assist with circuit design.
| Drain Current Continuous | 75 A |
|---|---|
| Peak Pulsed Drain Current | 75 A |
| Drain to Source Voltage | 55 V |
| Gate to Source Threshold Voltage | 2 - 4 V |
| Drain to Source On Resistance | 0.006 - 0.007 Ω |
| Thermal Resistance Junction to Case | 0.46 °C/W |
| Operating and Storage Temperature | -55 to 175 °C |
The maximum continuous drain current is 75 A.
They are designed for switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable products.