BCW60, BCX70 are NPN silicon AF transistors for AF input stages and driver applications. Features include high current gain, low collector-emitter saturation voltage and low noise between 30 Hz and 15 kHz. BCW60 and BCW61 are complementary types, with BCW60 being NPN and BCW61 being PNP.
The document provides comprehensive data for the BCW60 (NPN) and its complementary PNP type BCW61, as well as the BCX70 series. These devices are designed specifically for AF input stages and driver applications, offering high current gain and low noise performance within a specific frequency range.
Key features include low collector-emitter saturation voltage and optimized electrical characteristics across various temperature ranges. The datasheet covers maximum ratings, DC and AC electrical parameters such as transition frequency and cutoff currents, along with graphical representations of capacitance and noise figures versus operating conditions.
| Collector-base voltage (VCBO) | 32 V or 45 V |
|---|---|
| Emitter-base voltage (VEBO) | 5 V |
| DC collector current (IC) | 100 mA |
| Peak collector current (ICM) | 200 mA |
| Total power dissipation (Ptot) @ TS=71°C | 330 mW |
| Junction temperature (Tj) | 150 °C |
They are intended for use in AF input stages and driver applications.
The available packages include SOT23 variants such as BCW60A through BCW60FN.
The complementary types are listed as BCW61 and BCX71 (PNP).