The document introduces a series of radiation-hardened MOSFET products developed by Intersil Corporation. These products feature resistance to Single Event Effects (SEE), particularly Single Event Gate Rupture (SEGR), making them suitable for commercial and military space applications. The products have a total dose hardness of up to 100K RADS and maintain the necessary dose rate and neutron tolerance for military applications.
This datasheet details the electrical and radiation-hardened specifications of Intersil's FSF055D and FSF055R N-Channel Power MOSFETs. These devices are designed for commercial and military space applications, offering immunity to Single Event Gate Rupture (SEGR) and tolerance to 100K RAD total dose. Key features include 25A continuous drain current, 60V breakdown voltage, and 0.020 Ohm on-resistance. The datasheet includes absolute maximum ratings, electrical specifications, radiation performance curves, and screening information for military-grade reliability.
| Drain to Source Breakdown Voltage | 60 V |
|---|---|
| Gate Threshold Voltage | 4.0 V |
| Drain to Source On-State Voltage | 0.525 V |
| Drain to Source On Resistance | 0.020 Ohm |
| Total Gate Charge | 290 nC |
The continuous drain current is 25A.
The drain to source breakdown voltage is 60V.
The drain to source on-resistance is 0.020 Ohm.