This product is a UHF power transistor of the BLT70 model produced by Philips company. It has a very high efficiency and low working voltage. It is suitable for hand-held radio equipment in the 900MHz communication band in common emitter class AB operation.
The document describes the Philips BLT70, an NPN silicon planar epitaxial transistor encapsulated in a plastic SOT223H SMD package. It is specifically designed for use as a UHF power transistor in common emitter class-AB operation within the 900 MHz communication band.
| Collector-Base Voltage (VcBo) | 16 V |
|---|---|
| Collector-Emitter Voltage (Vce0) | 8 V |
| Emitter-Base Voltage (VeBo) | 2.5 V |
| Collector Current (DC) | 250 mA |
| Total Power Dissipation | 2.1 W |
It operates in the 900 MHz communication band.
The transistor is encapsulated in a plastic SOT223H SMD package.
It is designed for common emitter class-AB operation.