This document introduces Motorola's IGBT device, which has a high temperature short circuit capability and a low VCE(on), suitable for high frequency operation. It also features energy efficiency, ESD protection, and ruggedness.
This document is a Designer's Data Sheet for the MGP11N60ED, an N-channel enhancement-mode silicon gate IGBT co-packaged with a soft recovery ultra-fast rectifier. The device features advanced termination schemes for high voltage blocking and includes ESD protection via gate-emitter Zener diodes.
Key specifications include a collector-emitter voltage rating of 600 Vdc, continuous current ratings of 15 A at 25°C and 11 A at 90°C, and a total power dissipation of 96 Watts. The device is housed in an Industry Standard TO-220AB package (Style 9) with specific mounting torque requirements.
| Collector-Emitter Voltage (VCE) | 600 Vdc |
|---|---|
| Continuous Collector Current @ 25°C | 15 A |
| Total Power Dissipation @ 25°C | 96 Watts |
| Operating Junction Temperature Range | -55 to 150 °C |
| Package Type | TO-220AB (Style 9) |
The device has a minimum short circuit withstand time of 10 microseconds at 400 Vdc.
The typical collector-to-emitter on-state voltage is 2.0 Volts at an 8.0 Amp current.
Yes, the device is co-packaged with a soft recovery ultra-fast rectifier.