This document describes the features and characteristics of the MMBTA94 PNP silicon transistor from Unisonic Technologies Co., Ltd, including collector-emitter voltage, collector dissipation, and collector-emitter saturation voltage. This product is primarily used in telephone switching and high voltage switch applications.
This document is a technical datasheet for the MMBTA94, a PNP silicon transistor manufactured by Unisonic Technologies Co., Ltd. The device is designed as a high-voltage component with a collector-emitter voltage rating of -400V.
The datasheet provides absolute maximum ratings, electrical characteristics at 25°C, and typical performance curves. Key specifications include a maximum collector dissipation of 350mW and a DC current gain (hFE) ranging from 70 to 300 depending on the operating conditions.
| Collector-Emitter Voltage (Vceo) | -400 V |
|---|---|
| Collector Dissipation (Po) | 350 mW |
| Collector Current (Ic) | -300 mA |
| Junction Temperature (Tj) | +150 °C |
| Package Type | SOT-23 |
It is used for telephone switching and as a high voltage switch.
Yes, the lead-free plating product number is MMBTA94L.