This document describes the features and characteristics of the UTC 2SC1815 NPN epitaxial silicon transistor, including collector-emitter voltage, collector current, high hFE linearity, etc.
This document is a datasheet for the UTC 2SC1815, an NPN epitaxial silicon transistor designed for use as an audio frequency amplifier and high frequency oscillator. The device is compatible with the 2SA1015 complementary transistor and is packaged in a TO-92 case. Key features include a collector-emitter voltage rating of 50V and a collector current capability up to 150mA.
| Collector-Emitter voltage | 50V |
|---|---|
| Collector current | 150mA |
| Collector-base voltage | 60V |
| Emitter-base voltage | 5V |
| Collector dissipation | 400mW |
| Base current | 50mA |
| Junction Temperature | 125°C |
| Storage Temperature | -55 ~ +150 °C |
| Current gain bandwidth product | 80 MHz |
| Output capacitance | 2.0 3.0 pF |
Yes, it is complementary to the 2SA1015.
The DC current gain (hFE) ranges from 70 to 700.