Alliance Semiconductor AS7C164 SRAM Datasheet

The AS7C164 is a high-performance CMOS 65,536-bit Static Random Access Memory (SRAM) device organized as 8,192 words x 8 bits array. The device offers high performance and low power consumption, and features 2.0V data retention, making it ideal for high-performance and low-power applications. It also features easy-to-expand memory through CE1, CE2, and OE inputs.


Alliance Semiconductor AS7C164 SRAM Datasheet - cover page
Brand
Alliance Semiconductor
Category
Memory
Document type
Datasheet
Language
English
Pages
8
File format
PDF
File size
109 KB
Published
07 June, 2012
Updated
30 September, 2023
MD5 checksum
173BF9D6C597BD20E1321501DC194CE5

About this manual

The AS7C164 is a high-performance Static Random Access Memory (SRAM) organized as 8,192 words by 8 bits. It features commercial temperature operation and is designed for applications requiring fast data access and low power consumption.

The device offers multiple speed grades with address access times of 12/15/20 ns and output enable access times of 6/7/8 ns. It includes center power and ground pins, TIL-compatible three-state I/O, and a 28-pin JEDEC standard package available in SOJ or PDIP formats.

What's inside

  • Features
  • Functional description
  • Absolute maximum ratings
  • Recommended operating conditions
  • DC operating characteristics
  • Read cycle timing
  • Write cycle timing
  • Data retention characteristics

Specifications

Organization8,192 words x 8 bits
Supply Voltage5V
Operating Temperature (Commercial)0 to +70 °C
Package Type28-pin PDIP or SOJ (300 mil)
Max Address Access Time12/15/20 ns

Frequently asked questions

What is the data retention voltage?

The device offers 2.0V data retention.

Is the AS7C164 TIL compatible?

Yes, it is TIL-compatible with three-state I/O.

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