The AS6WA25616 is a 3.0V to 3.6V 256K×16 Intelliwatt™ low-power CMOS SRAM with one chip enable. It features industrial and commercial temperature ranges available, 262,144 words × 16 bits organization, 3.0V to 3.6V at 55 ns, low power consumption, 1.5V data retention, equal access and cycle times, easy memory expansion with CS, OE inputs, smallest footprint packages - 48-ball FBGA - 400-mil 44-pin TSOP 2, ESD protection ≥ 2000 volts and latch-up current ≥ 200 mA.
The AS6WA25616 is a low-power CMOS Static Random Access Memory (SRAM) device organized as 262,144 words x 16 bits. It features Intelliwatt active power circuitry to minimize power consumption in both active and standby modes, making it suitable for industrial and commercial temperature ranges.
The device operates from a single 3.0V to 3.6V supply and is available in 44-pin TSOP 2 and 48-ball FBGA packages. It supports easy memory expansion with active high and low chip selects and includes separate byte enable controls for individual byte access.
| Organization | 262,144 words x 16 bits |
|---|---|
| Operating Voltage | 3.0V to 3.6V |
| Access Time | 55 ns |
| Active Power Consumption | 144 mW |
| Standby Power Consumption | 72 pW max |
| Data Retention Voltage | 1.5V |
| Package Types | 48-ball FBGA, 44-pin TSOP 2 |
The device is organized as 262,144 words x 16 bits.
The device operates from a single 3.0V to 3.6V supply.
The maximum standby power consumption is 72 pW at 3.6V.