This document describes the NTHD5903T1 chip, which features low RDS(on) for higher efficiency, logic level gate drive, and a miniature ChipFET surface mount package that saves board space. The chip is suitable for power management in portable and battery-powered products, such as cellular and cordless telephones and PCMCIA cards.
This document is a technical datasheet for the NTHD5903T1, a dual P-Channel ChipFET Power MOSFET manufactured by ON Semiconductor. The device features low Rds(on) for higher efficiency and logic-level gate drive capabilities.
The datasheet provides maximum ratings, electrical characteristics including thermal properties, typical performance graphs, and package dimensions for the CASE 1206A surface mount package.
| Drain-Source Voltage | -20 V |
|---|---|
| Maximum Power Dissipation (Ta = 25°C) | 24 W |
| Operating Junction Temperature Range | -55 to +150 °C |
The device uses a ChipFET CASE 1206A surface mount package.
Yes, the datasheet lists Logic Level Gate Drive as a key feature.