This document describes the features and characteristics of M29W400BT and M29W400BB 4 Mbit flash memory, including single supply voltage, access time, programming time, memory blocks, programming/erase controller, erase suspend and resume modes, unlock bypass program command, temporary block unprotection mode, low power consumption, data retention time, electronic signature, etc.
The document details the specifications for the M29W400BT and M29W400BB, which are 4 Mbit (512Kb x8 or 256Kb x16) non-volatile flash memory devices. These chips operate on a single low voltage supply ranging from 2.7 to 3.6V for programming, erasing, and reading operations.
| Capacity | 4 Mbit (512Kb x8 or 256Kb x16) |
|---|---|
| Supply Voltage | 2.7 to 3.6V |
| Access Time | 55ns |
| Programming Time | 10s per Byte/Word typical |
| Data Retention | 20 YEARS |
The device operates with a single low voltage supply ranging from 2.7 to 3.6V for program, erase, and read operations.
Each memory block is rated for up to 100,000 program/erase cycles.
The device provides 20 years of data retention under specified conditions.