This document describes the features and characteristics of the TP2520 product, including low threshold, high input impedance, low input capacitance, and fast switching speeds.
The document describes the TP2520 as a low threshold enhancement-mode (normally-off) transistor utilizing a vertical DMOS structure. It combines the power handling capabilities of bipolar transistors with the high input impedance and positive temperature coefficient inherent in MOS devices, making it free from thermal runaway.
Key features include a maximum threshold voltage of -2.4V, low input capacitance up to 125pF, fast switching speeds, and low ON-resistance. The device is available in TO-243AA (SOT-89) packages with RoHS compliance options.
| Drain-to-source breakdown voltage (BVdss) | -200 V |
|---|---|
| Gate threshold voltage (Vgs(th)) | -1.0 to -2.4 V |
| Input capacitance (Ciss) | 75 to 125 pF |
| Static drain-to-source ON-state resistance (Rds(on)) | 8.0 to 15 Ohms |
| Operating and storage temperature | -55°C to +150°C |
The maximum threshold voltage is -2.4V.
Yes, a specific ordering code indicates RoHS compliance.