This document is about MRF1047T1 technical data sheet, which details the features and characteristics of the product, including low noise characteristics, high current gain-bandwidth product, maximum stable gain, output third order intercept, etc.
This document provides technical data for the MRF1047T1, an NPN silicon low noise transistor fabricated using Motorola's 12 GHz discrete bipolar process. The device is designed for high gain, low noise applications in front-end systems such as pagers, cellular phones, and cordless phones.
| Collector-Emitter Voltage (VcEO) | 5.0 Vdc |
|---|---|
| Collector-Base Voltage (VcBo) | 12 Vdc |
| Emitter-Base Voltage (VEBo) | 2.5 Vdc |
| Collector Current (Continuous) | 45 mA |
| Power Dissipation @ Tg = 75°C | 0.172 W |
| Storage Temperature Range | -55 to 150 °C |
| Maximum Junction Temperature | 150 °C |
| Thermal Resistance, Junction-to-Case (RθJC) | 435 °C/W |
The thermal resistance, junction-to-case (RθJC), is 435 °C/W.